sot-23 plastic-encapsulate mosfets cj3400 a n-channel enhancement mode field effect transistor feature z high dense cell design for extremely low r ds(on) z exceptional on-resistance and maximum dc current capability marking: r0 a maximum ratings ( t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 30 v gate-source voltage v gs 12 v continuous drain current i d 5.8 a drain current-pulsed (note 1) i dm 30 a power dissipation p d 400 mw thermal resistance from junction to ambient (note 2) r ja 313 /w junction temperature t j 150 storage temperature t stg -55~+150 so t -23 1. gate 2. source 3. drain 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,nov,2013
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max units off characteristics drain-source breakdown voltage v (br) dss v gs = 0v, i d =250a 30 v zero gate voltage drain current i dss v ds =24v,v gs = 0v 1 a gate-source leakage current i gss v gs =12v, v ds = 0v 100 na on characteristics (note 3) v gs =10v, i d =5.8a 32 m ? v gs =4.5v, i d =5a 38 m ? drain-source on-resistance (note 3) r ds(on) v gs =2.5v,i d =4a 45 m ? forward tranconductance g fs v ds =5v, i d =5a 8 s gate threshold voltage v gs(th) v ds =v gs , i d =250a 0.7 1.4 v dynamic characteristics (note 4,5) input capacitance c iss 1155 pf output capacitance c oss 108 pf reverse transfer capacitance c rss v ds =15v,v gs =0v,f =1mhz 84 pf gate resistance r g v ds =0v,v gs =0v,f =1mhz 3.6 ? switching characteristics (note 4,5) turn-on delay time t d(on) 5 ns turn-on rise time t r 7 ns turn-off delay time t d(off) 40 ns turn-off fall time t f v gs =10v,v ds =15v, r l =2.7 ? ,r gen =3 ? 6 ns drain-source diode characteristics and maximum ratings diode forward voltage (note 3) v sd i s =1a,v gs =0v 1 v note : 1. repetitive rating : pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t < 5 sec. 3. pulse test : pulse width 300s, duty cycle 2%. 4. guaranteed by design, not su bject to production testing. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,nov,2013
0.0 0.3 0.6 0.9 1.2 1e-3 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 0246810 0 100 200 300 400 500 0246810 0 4 8 12 16 20 24 0 5 10 15 20 25 0 50 100 150 200 t a =25 pulsed source current i s (a) source to drain voltage v sd (v) t a =25 pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) cj3400 a t a =25 pulsed i d =5a ?? v gs r ds(on) on-resistance r ds(on) (m ? ) gate to source voltage v gs (v) t a =25 pulsed output characteristics drain current i d (a) drain to source voltage v ds (v) v gs =1.5v v gs =2v v gs =2.5v v gs =7v~3v t a =25 pulsed on-resistance r ds(on) (m ? ) drain current i d (a) v gs =10v v gs =4.5v v gs =2.5v r ds(on) ?? i d i s ?? v sd 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,nov,2013
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